Kontaktujte nás | Jazyk: čeština English
Název: | Mechanism and suppression of physisorbed-water-caused hysteresis in graphene FET sensors |
Autor: | Bartošík, Miroslav; Mach, Jindřich; Piastek, Jakub; Nezval, David; Konečný, Martin; Švarc, Vojtěch; Ensslin, Klaus; Šikola, Tomáš |
Typ dokumentu: | Recenzovaný odborný článek (English) |
Zdrojový dok.: | ACS sensors. 2020, vol. 5, issue 9, p. 2940-2949 |
ISSN: | 2379-3694 (Sherpa/RoMEO, JCR) |
DOI: | https://doi.org/10.1021/acssensors.0c01441 |
Abstrakt: | Hysteresis is a problem in field-effect transistors (FETs) often caused by defects and charge traps inside a gate isolating (e.g., SiO2) layer. This work shows that graphene-based FETs also exhibit hysteresis due to water physisorbed on top of graphene determined by the relative humidity level, which naturally happens in biosensors and ambient operating sensors. The hysteresis effect is explained by trapping of electrons by physisorbed water, and it is shown that this hysteresis can be suppressed using short pulses of alternating gate voltages. |
Plný text: | https://pubs.acs.org/doi/10.1021/acssensors.0c01441 |
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