Cross sectioning of optoelectronic device

Abstract

Optoelectronic devices play very important role in life nowadays. Most of the devices are widely used in fields ranging from image processing and fiber optic communication to common consumer electronics (twilight switches, house security systems, etc.), where components such as photodiodes, laser diodes, phototransistors, photomultipliers, optical isolators, LEDs or OLEDs are mounted. Accurate procedure is necessary during the preparation to achieve their fully functionality. Because the devices are mostly prepared as multilayer systems, there is a requirement for correct functional thickness of layers. The thickness of the layers could be checked not only during the deposition but also retrospectively in the case of some failures during their deposition. The method of ion beam milling can be used for cross section preparation and can achieve cross sections of soft materials or material combinations consisting of hard and soft components, which are used in devices. This contribution deals with case study of SEM thickness layer characterization of optoelectronic device on cross section, which was prepared by ion milling.